PART |
Description |
Maker |
DA28F016SV-075 DA28F016SV-070 E28F016SV-075 E28F01 |
WSR2 0.04 Ohms 1% Tolerance 16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY 16-MBIT (1 MBIT x 16 / 2 MBIT x 8) FlashFile MEMORY 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 80 ns, PDSO56 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 70 ns, PDSO56 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY 1M X 16 FLASH 5V PROM, 75 ns, PDSO56
|
Intel Corp. Intel Corporation Intel, Corp.
|
DT28F320S5-90 DT28F320S5-110 DT28F160S5-70 DT28F16 |
Word-wide FlashFile memory. 32 Mbit, access speed 90 ns Word-wide FlashFile memory. 32 Mbit, access speed 110 ns Word-wide FlashFile memory. 16 Mbit, access speed 70 ns Word-wide FlashFile memory. 16 Mbit, access speed 100 ns
|
Intel
|
28F016S3 |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT
|
Intel
|
28F640J3A 28F128J3A 28F320J3A |
3 Volt Intel StrataFlash Memory(3 V 64M位英特尔StrataFlash存储 3 Volt Intel StrataFlash Memory(3 V 128M位Strata闪速存储器) 3 Volt Intel StrataFlash Memory(3 V 32M位英特尔StrataFlash存储
|
Intel Corp.
|
28F008SA-L 29043505 |
8-Mbit (1-Mbit x 8) FlashFile Memory From old datasheet system
|
Intel
|
AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms 0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位)CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc. SPANSION LLC ADVANCED MICRO DEVICES INC
|
DT28F016SV-080 DT28F016SV-100 E28F016SV-070 E28F01 |
16-MBIT (1 MBIT x 16/ 2 MBIT x 8) FlashFile MEMORY 16-MBIT (1 MBIT x 16 2 MBIT x 8) FlashFile MEMORY 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
|
INTEL[Intel Corporation]
|
DA28F016SA-120 E28F016SA-120 DA28F016SA-080 E28F01 |
28F016SA 16-MBIT (1 MBIT X 16/ 2 MBIT X 8)FlashFile MEMORY 28F016SA 16-MBIT (1 MBIT X 16 / 2 MBIT X 8)FlashFile MEMORY
|
Intel
|
GE28F256L30T110 GE28F128L30B110 |
1.8 Volt Intel StrataFlashWireless Memory with 3.0-Volt I/O (L30) 16M X 16 FLASH 1.8V PROM, 88 ns, PBGA79 1.8 Volt Intel StrataFlashWireless Memory with 3.0-Volt I/O (L30) 8M X 16 FLASH 1.8V PROM, 88 ns, PBGA56
|
Intel, Corp.
|
AT25DF041A-SSHF-B AT25DF041A-SSHF-T AT25DF041A-SSH |
4-megabit 2.3-volt or 2.7-volt Minimum SPI Serial Flash Memory
|
ATMEL Corporation
|